CHARGE TRANSPORT IN SEMICONDUCTOR MICROJUNCTIONS

被引：3
|
作者：
TRZCINSKI, R
QUEISSER, HJ
机构：
[1] Max-Planck-Inst fuer, Festkoerperforschung, Stuttgart,, West Ger, Max-Planck-Inst fuer Festkoerperforschung, Stuttgart, West Ger
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 02期
关键词：
D O I：
10.1007/BF00618875
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：119 / 122
页数：4
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