ION-BEAM SYNTHESIS OF BURIED METALLIC AND SEMICONDUCTING SILICIDES

被引：37
|
作者：
MANTL, S
机构：
[1] Institut für Schicht-und lonentechnik, KFA Jülich, Postfach 19 13
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷
关键词：
D O I：
10.1016/0168-583X(93)90704-A
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A short review will be given of the progress in fabricating buried metallic and semiconducting silicides by high dose ion implantation and subsequent annealing. Emphasis is placed on the growth mechanism of buried layers during thermal annealing. A simple rule allows predictions of the growth behaviour of various compounds.
引用
收藏
页码：895 / 900
页数：6
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