INVESTIGATION OF DEFECTS IN WEAKLY DAMAGED ION-IMPLANTED GAAS-LAYERS

被引：21
|
作者：
WESCH, W
JORDANOV, A
GARTNER, K
GOTZ, G
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(89)90822-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：445 / 448
页数：4
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