SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA-ETCHING OF SILICON AND ITS COMPOUNDS

被引：0

作者：

COBURN, JW ^{[1
]}

KAY, E ^{[1
]}

机构：

[1] IBM CORP,DEPT PLASMA SCI,SAN JOSE,CA 95114

来源：

SOLID STATE TECHNOLOGY | 1979年 / 22卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 124

页数：8

共 50 条

[1] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA-ETCHING OF SILICON AND ITS COMPOUNDS
COBURN, JW
KAY, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 407 - 407
[2] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS
COBURN, JW
KAY, E
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41
[3] REDEPOSITION KINETICS IN FLUOROCARBON PLASMA-ETCHING
GRAY, DC
MOHINDRA, V
SAWIN, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02): : 354 - 364
[4] KINETICS AND MECHANISMS OF CHEMICAL-REACTIONS IN NON-EQUILIBRIUM PLASMA-ETCHING OF SILICON AND SILICON-COMPOUNDS
VINOGRADOV, GK
NEVZOROV, PI
POLAK, LS
SLOVETSKY, DI
[J]. VACUUM, 1982, 32 (09) : 529 - 537
[5] PLASMA-ETCHING OF SILICON AND SILICON-OXIDES
FLAMM, DL
[J]. SILICON CHEMISTRY, 1988, : 391 - 403
[6] PLASMA-ETCHING OF SILICON WITH NITROGEN TRIFLUORIDE
EISELE, KM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C89 - C89
[7] SILICON ROUGHNESS INDUCED BY PLASMA-ETCHING
PETRI, R
BRAULT, P
VATEL, O
HENRY, D
ANDRE, E
DUMAS, P
SALVAN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7498 - 7506
[8] INSITU OBSERVATION IN SILICON PLASMA-ETCHING
NISHIZAWA, J
HAYASAKA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C91 - C91
[9] PLANAR PLASMA-ETCHING OF POLYCRYSTALLINE SILICON
HAYES, J
PANDHUMSOPORN, T
[J]. SOLID STATE TECHNOLOGY, 1980, 23 (11) : 71 - 78
[10] APPLICATIONS FOR SILICON TETRAFLUORIDE IN PLASMA-ETCHING
BOYD, H
TANG, MS
[J]. SOLID STATE TECHNOLOGY, 1979, 22 (04) : 133 - 138

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