LOW-TEMPERATURE RECOVERY OF IRRADIATION DEFECTS IN N-TYPE GERMANIUM

被引：14

作者：

MEESE, JM ^{[1
]}

机构：

[1] UNIV DAYTON,PHYS DEPT,DAYTON,OH 45469

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4373

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4373 / 4391

页数：19

共 50 条

[1] LOW-TEMPERATURE IRRADIATION OF N-TYPE GERMANIUM
CLELAND, JW
CRAWFORD, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 149 - 151
[2] DEFECTS FORMED IN N-TYPE INP AS A RESULT OF LOW-TEMPERATURE IRRADIATION
KOLCHENKO, TI
LOMAKO, VM
MOROZ, SE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 461 - 462
[3] LOW-TEMPERATURE THERMAL RESISTANCE OF N-TYPE GERMANIUM
KEYES, RW
[J]. PHYSICAL REVIEW, 1961, 122 (04): : 1171 - &
[4] LOW-TEMPERATURE ELECTRON-IRRADIATION PRODUCED DEFECTS IN N-TYPE SILICON
TROXELL, JR
WATKINS, GD
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 245 - 245
[5] LOW-TEMPERATURE IMPURITY CONDUCTION AND MAGNETORESISTIVITY IN N-TYPE GERMANIUM
CSAVINSZKY, P
[J]. PHYSICAL REVIEW, 1960, 119 (05): : 1605 - 1609
[6] RECOVERY OF LOW-TEMPERATURE ELECTRON-IRRADIATION-INDUCED DAMAGE IN N-TYPE GAAS
THOMMEN, K
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 375 - &
[7] LOW-TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF DEGENERATE N-TYPE GERMANIUM
KATZ, MJ
KOENIG, SH
LOPEZ, AA
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (21) : 828 - &
[8] RATE PROCESSES AND LOW-TEMPERATURE ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM
KOENIG, SH
[J]. PHYSICAL REVIEW, 1958, 110 (04): : 986 - 988
[9] LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON
BROWN, RA
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 890 - +
[10] LOW-TEMPERATURE THERMOELECTRIC POWER OF HEAVILY DOPED N-TYPE GERMANIUM
HEDGCOCK, FT
MATHUR, DP
[J]. CANADIAN JOURNAL OF PHYSICS, 1965, 43 (11) : 2008 - &

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