HIGH-PERFORMANCE MESFET POWER-AMPLIFIERS FOR HIGH-VOLUME APPLICATION IN KA BAND

被引：1
|
作者：
MONDAL, J
CARLSON, D
PULVER, C
VICKBERG, M
GEDDES, J
机构：
[1] SRC, Honeywell, Bloomington, Minnesota
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1991年 / 4卷 / 08期
关键词：
MESFET; MONOLITHIC CIRCUITS; POWER AMPLIFIERS; MILLIMETER WAVES;
D O I：
10.1002/mop.4650040802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A very repeatable MBE power MMIC process has been developed for low-cost and high-volume Ka-band applications. The RF yield under power drive has reached more than 60%. The power out in a balanced configuration was 300 mW with 18% power added efficiency at 30 GHz.
引用
收藏
页码：285 / 288
页数：4
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