ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED COMPENSATED N-TYPE GERMANIUM PRODUCED BY NEUTRON DOPING

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ZABRODSKII, AG

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 06期

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O469 [凝聚态物理学];

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070205 ;

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页码：670 / 676

页数：7

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