CELL FOR MEASURING THERMO-EMF OF SEMICONDUCTORS IN A MOLTEN STATE

被引：0

作者：

KAZANDZHAN, BI

机构：

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR | 1969年 / 03期

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中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：752 / +

页数：1

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[1] CELL FOR CONDUCTANCE AND THERMO-EMF MEASUREMENT AS A MOLTEN SEMICONDUCTOR
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[J]. INDUSTRIAL LABORATORY, 1976, 42 (08): : 1284 - 1285
[2] SIZE DEPENDENCE OF THERMO-EMF IN SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 241 - 245
[3] FORMULATION AND MEASUREMENT OF THE THERMO-EMF IN UNIPOLAR SEMICONDUCTORS
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[4] DEVICE FOR MEASURING THERMO-EMF OF CONDENSED ALLOYS
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[J]. INDUSTRIAL LABORATORY, 1967, 33 (05): : 753 - &
[5] THERMO-EMF OF SEMICONDUCTORS IN A CLASSICALLY STRONG MAGNETIC FIELD
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[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1023 - +
[6] QUANTUM OSCILLATIONS OF THERMO-EMF IN SEMICONDUCTORS IN A TRANSVERSE MAGNETIC FIELD
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[8] THERMO-EMF AND THERMOELECTRIC CURRENT IN UNIPOLAR SEMICONDUCTORS WITH FINITE DIMENSIONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (11): : 1091 - 1094
[9] MEASUREMENT OF ELECTRICAL CONDUCTIVITY AND THERMO-EMF OF MOLTEN, HIGHLY VOLATILE SUBSTANCES
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[J]. INDUSTRIAL LABORATORY, 1970, 36 (04): : 581 - +
[10] MEASURING APPARATUS FOR ABSOLUTE THERMO-EMF AND ELECTRICAL-RESISTIVITY
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