THERMAL COMPARISON OF LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES

被引：25
|
作者：
PIPREK, J [1 ]
YOO, SJB [1 ]
机构：
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 11期
关键词：
VERTICAL CAVITY SURFACE EMITTING LASERS; HEAT TRANSFER;
D O I：
10.1049/el:19940589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heat flow finite element analysis is applied to basic device concepts, including planar structures with InGaAsP/InP or AlAs/GaAs substrate side mirrors (mounted top-up or top-down) and etched-well lasers with Si/SiO2 dielectric mirrors. In several cases, the calculated thermal resistance values are higher than with short-wavelength devices, but wafer-fused structures on GaAs substrate show clear thermal advantages.
引用
收藏
页码：866 / 868
页数：3
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