DRIFT-MOBILITY PROFILES IN GAAS FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
STEINER, K
机构：
来源：
ARCHIV FUR ELEKTROTECHNIK | 1994年 / 77卷 / 02期
关键词：
D O I：
10.1007/BF01578535
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for evaluating drift mobility profiles in field effect transistors is proposed. The frequency dependent Schottky gate admittance and the low-field transconductance is used to calculate mobility data. The frequency dependent admittance leads to gate capacitances that are free from series resistance, minority carrier and deep level effects. The method provides a convenient tool for routine on-wafer measurements of LSI circuit transport properties. As an example, drift mobility profiles in long, short, wide and narrow channel LDD- and BPLDD-GaAs-MESFET with various p-buffer layer concentration levels are discussed. Such devices are the standard device for digital GaAs integrated circuits with LSI complexity.
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页码：123 / 133
页数：11
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