DISLOCATION PINNING IN COPPER AT 4.2 DEGREES K AND IN STAGE I

被引：9

作者：

SOSIN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.1931172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3373 / &

共 50 条

[1] DISLOCATION MOBILITY IN PURE COPPER AT 4.2 DEGREES K
JASSBY, KM
VREELAND, T
PHYSICAL REVIEW B, 1973, 8 (08): : 3537 - 3541
[2] DISLOCATION VELOCITY MEASUREMENTS AT 4.2 DEGREES K
SCHWARZ, RB
MITCHELL, JW
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 285 - &
[3] DISLOCATION PINNING EFFECTS IN OXIDIZED AND REDUCED COPPER AFTER ELECTRON-IRRADIATION AT 4.2-K
WANTZEN, B
SOKOLOWSKI, G
LUCKE, K
JOURNAL DE PHYSIQUE, 1983, 44 (NC-9): : 551 - 556
[4] TEMPERATURE DEPENDENCE FROM 250 DEGREES K TO 370 DEGREES K OF DISLOCATION PINNING IN COPPER SINGLE CRYSTALS BY RADIATION DEFECTS
PARE, VK
THOMPSON, DO
ACTA METALLURGICA, 1962, 10 (APR): : 382 - &
[5] ADSORPTION OF HELIUM ON A COPPER SURFACE AT 4.2 DEGREES K
DANILOVA, NP
SHALNIKO.AI
CRYOGENICS, 1968, 8 (05) : 322 - &
[6] ADSORPTION OF HELIUM ON A COPPER SURFACE AT 4.2 DEGREES K
DANILOVA, NP
SHALNIKO.AI
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1967, (06): : 1464 - &
[7] The deformation of copper single crystals at 4.2 degrees K
Niewczas, M
Basinski, ZS
Embury, JD
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1997, 234 : 1030 - 1032
[8] STUDY OF DISLOCATION MOBILITY IN KBR SINGLE CRYSTALS AT 4.2 DEGREES K
OSTAPCHU.EI
PARIISKI.VB
STARTSEV, VI
SHAPOVAL.IA
SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (12): : 2951 - +
[9] THERMAL CONDUCTIVITY OF COPPER BETWEEN 0.25-DEGREES-K AND 4.2-DEGREES-K
NICOL, J
TSENG, TP
PHYSICAL REVIEW, 1953, 92 (04): : 1062 - 1063
[10] OPTICAL ABSORPTION OF COPPER AND SILVER AT 4.2-DEGREES-K
BIONDI, MA
PHYSICAL REVIEW, 1956, 102 (04): : 964 - 967

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