EFFECTS OF INELASTIC ELECTRON-PHONON SCATTERING ON THE RESONANT TUNNELING IN DOUBLE-BARRIER STRUCTURE

被引:3
|
作者
TYAN, JH [1 ]
LUE, JT [1 ]
SHENG, JS [1 ]
机构
[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
关键词
D O I
10.1063/1.346463
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Breit-Wigner formula is exploited to calculate the tunneling transmission probability affected by longitudinal optical phonon scattering in multiple quantum wells composed of Ga1-xAlxAs compounds. A quantitative result shows that the resonance electron energy and the integrated total transmission probability through the potential barriers are not changed, while the transmission peak is reduced and the linewidth is broadened.
引用
收藏
页码:2829 / 2832
页数:4
相关论文
共 50 条
  • [1] ELECTRON-PHONON INTERACTION IN DOUBLE-BARRIER RESONANT TUNNELING
    WU, XG
    ULLOA, SE
    [J]. PHYSICAL REVIEW B, 1991, 44 (23): : 13148 - 13151
  • [2] Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure
    J.-J. Shi
    B.C. Sanders
    S.-H. Pan
    [J]. The European Physical Journal B - Condensed Matter and Complex Systems, 1998, 4 : 113 - 119
  • [3] Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure
    Shi, JJ
    Sanders, BC
    Pan, SH
    [J]. EUROPEAN PHYSICAL JOURNAL B, 1998, 4 (01): : 113 - 119
  • [4] INELASTIC ELECTRON-SCATTERING IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE REVEALED WITH PHOTOEXCITATION
    FIGIELSKI, T
    MAKOSA, A
    WOSINSKI, T
    HARNESS, PC
    SINGER, KE
    [J]. ACTA PHYSICA POLONICA A, 1993, 84 (04) : 817 - 819
  • [5] ELECTRON-PHONON INTERACTION DURING RESONANT-TUNNELING THROUGH A DOUBLE-BARRIER HETEROSTRUCTURE
    FIGIELSKI, T
    MAKOSA, A
    WOSINSKI, T
    HARNESS, PC
    SINGER, KE
    [J]. SOLID STATE COMMUNICATIONS, 1994, 91 (11) : 913 - 917
  • [6] INELASTIC ELECTRON RESONANT TUNNELING THROUGH A DOUBLE-BARRIER NANOSTRUCTURE
    ZOU, NZ
    CHAO, KA
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (22) : 3224 - 3227
  • [7] EFFECT OF INELASTIC-SCATTERING ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES
    BOOKER, SM
    SHEARD, FW
    TOOMBS, GA
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B439 - B441
  • [8] SCATTERING EFFECTS ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES
    GU, B
    COLUZZA, C
    MANGIANTINI, M
    FROVA, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3510 - 3514
  • [9] EFFECTS OF ELECTRON INTERFACE-PHONON INTERACTION ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES
    MORI, N
    TANIGUCHI, K
    HAMAGUCHI, C
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B83 - B87
  • [10] EFFECTS OF SCATTERING ON RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES
    XU, HZ
    CHEN, GG
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 187 (02): : K37 - K41