MECHANISM OF DOPING OF GLASSY CHALCOGENIDE SEMICONDUCTORS

被引：0
|
作者：
MAZETS, TF
TSENDIN, KD
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 11期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An analysis of extensive experimental data is used to propose a model of doping of glassy chalcogenide semiconductors. The appearance of electrically active centers is attributed to the formation of rigid microregions during doping. The structure of these regions prevents saturation of all the valence bonds of an impurity atom inside a microregion.
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页码：1214 / 1217
页数：4
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