共 50 条
- [3] DISINTEGRATION OF TISI2 ON NARROW POLY-SI LINES AT HIGH-TEMPERATURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1223 - 1231
- [4] Dopants (P, As and B) in poly-Si/TiSi2 system: Redistribution and activation. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, 1996, 96 (04): : 85 - 91
- [7] HREM OF TISI2/SI AND TISI2/SIO2 INTERFACES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 297 - 302
- [9] FORMATION OF A TiSi2/n + POLY-Si LAYER BY RAPID LAMP HEATING AND ITS APPLICATION TO MOS DEVICES. Electron device letters, 1984, EDL-5 (07): : 217 - 220
- [10] Low-contact resistance poly-metal gate electrode using TiN/thin TiSi2/poly-Si structure JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2377 - 2380