INTERNAL 2ND-HARMONIC GENERATION IN CW ALGAAS SQW LASERS - THE FACET DEGRADATION MONITORING

被引：4

作者：

KRAVETSKY, IV ^{[1
]}

KULYUK, LL ^{[1
]}

LUPU, AT ^{[1
]}

SHUTOV, DA ^{[1
]}

SURUCEANU, GI ^{[1
]}

SYRBU, AV ^{[1
]}

YAKOVLEV, VP ^{[1
]}

机构：

[1] KISHINEV POLYTECH INST,KISHINEV 277012,MOLDOVA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90546-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The spectra of the second-harmonic (SH) radiation, generated in the separate-confinement single quantum well (SQW) semiconductor AlGaAs/GaAs laser have been measured at various levels of the injection current. The observed correlation between laser and SH mode intensities is explained by taking into consideration the dispersion of the second-order nonlinear susceptibility of the GaAs active region. It is shown, that due to the high sensitivity of the SH signal to the semiconductor near-surface layer condition, the internal SH generation can be used for the in situ diagnostics of the laser facet degradation processes.

引用

页码：424 / 428

页数：5

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