INVESTIGATION INTO POTENTIALS ON SURFACE OF N-REGION OF SILICON DIODES AT A DIRECT SHIFT

被引：0
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作者：
MATSOV, MV
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1971年 / 12期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：142 / &
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