FREE-CARRIER ABSORPTION IN SEMICONDUCTOR-LASERS

被引：26
|
作者：
HAUG, A
机构：
[1] Max-Planck-Inst. fur Festkorperforschung, Stuttgart
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 03期
关键词：
D O I：
10.1088/0268-1242/7/3/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Free-carrier absorption is theoretically studied for semiconductor lasers where the photon energy is as large as the energy gap. A quantum-mechanical investigation shows that intraband absorption is very weak and interband absorption totally negligible, in contrast to the usual classical estimations. Therefore free-carrier absorption in semiconductor lasers is insignificant. It follows that free-carrier absorption is not the reason for the impossibility of laser action in indirect-bandgap semiconductors. Obviously the scattering and mirror losses are responsible for this effect.
引用
收藏
页码：373 / 378
页数：6
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