DETERMINATION OF THE ABSORPTION AND THE FREE CARRIER DISTRIBUTION IN SILICON AT HIGH-LEVEL PHOTOGENERATION AT 1.06 MU-M AND 294-K

被引：13

|

作者：

SVANTESSON, KG

NILSSON, NG

机构：

来源：

PHYSICA SCRIPTA | 1978年 / 18卷 / 06期

关键词：

D O I：

10.1088/0031-8949/18/6/012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：405 / 409

页数：5

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[1] DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF THE FREE CARRIER AND INTERBAND ABSORPTION IN SILICON AT 1.06 MU-M
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[2] ROLE OF FREE CARRIER ABSORPTION IN LASER ANNEALING OF SILICON AT 1.06 MU-M
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[3] 4-WAVE-MIXING REFLECTIVITY OF SILICON AT 1.06 MU-M - INFLUENCE OF FREE-CARRIER ABSORPTION
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[4] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION
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[5] SILICON OPTICAL MODULATORS AT 1.3 MU-M BASED ON FREE-CARRIER ABSORPTION
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[6] DIRECT FREE-HOLE ABSORPTION INDUCED IN GERMANIUM BY 1.06 MU-M PICOSECOND PULSES
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[7] TEMPERATURE-DEPENDENCE OF OPTICAL-ABSORPTION AT LAMBDA=1.06 MU-M IN AMORPHOUS AND CRYSTALLINE SILICON
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[8] Determination of the polarization dependence of the free-carrier-absorption in 4H-SiC at high-level photoinjection
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[9] A STUDY INTO THE DYNAMICS OF THE POPULATION OF THE I-4-11/2 LEVEL IN ND-3+ IONS IN GLASSES BY THE ABSORPTION AT THE WAVELENGTHS OF 0.66 AND 1.06 MU-M
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[10] EFFICIENT REDUCTIVE OR OXIDATIVE CURRENT FLOW ACROSS 100 MU-M USING AN SI PHOTOELECTRODE UNDER HIGH-LEVEL INJECTION
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