PRESENT STATE OF STRUCTURAL STABILITY AND GROWTH OF SILICON-CARBIDE POLYTYPES

被引：10

作者：

DUBEY, M ^{[1
]}

RAM, US ^{[1
]}

RAI, KN ^{[1
]}

SINGH, G ^{[1
]}

机构：

[1] BANARAS HINDU UNIV,DEPT PHYS,VARANASI,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 18卷 / 02期

关键词：

D O I：

10.1002/pssa.2210180231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：689 / 698

页数：10

共 50 条

[1] GROUND-STATE PROPERTIES OF POLYTYPES OF SILICON-CARBIDE
DENTENEER, PJH
VANHAERINGEN, W
[J]. PHYSICAL REVIEW B, 1986, 33 (04): : 2831 - 2834
[2] BIREFRINGENCE IN POLYTYPES OF SILICON-CARBIDE
MAKHALOV, YA
MOKHOV, EN
[J]. FIZIKA TVERDOGO TELA, 1976, 18 (08): : 2482 - 2485
[3] GROWTH OF UNUSUAL SILICON-CARBIDE POLYTYPES BY ISLAND FORMATION
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[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1974, 7 (DEC1) : 515 - 518
[4] PRESENT STATE OF STRUCTURAL STABILITY AND GROWTH OF CADMIUM IODIDE POLYTYPES
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01): : 213 - 221
[5] A THEORY OF THE ORIGIN OF SILICON-CARBIDE POLYTYPES
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[J]. PHASE TRANSITIONS, 1989, 16 : 263 - 274
[6] SILICON-CARBIDE POLYTYPES AS EQUILIBRIUM STRUCTURES
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HEINE, V
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[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (23) : 5097 - 5113
[7] ATOMIC RELAXATION IN SILICON-CARBIDE POLYTYPES
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[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (23) : 5115 - 5134
[8] IMPACT IONIZATION IN SILICON-CARBIDE POLYTYPES
VODAKOV, YA
LITVIN, DP
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (05): : 502 - 505
[9] STRUCTURAL ASPECTS OF BONDING IN SILICON-CARBIDE POLYTYPES - ABINITIO MO CALCULATIONS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (06) : 541 - 549
[10] ELASTIC-CONSTANTS OF SILICON-CARBIDE POLYTYPES
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[J]. FIZIKA TVERDOGO TELA, 1976, 18 (10): : 3111 - 3112

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