LOW-TEMPERATURE PHOTO-ASSISTED OXIDATION OF SILICON

被引：25
|
作者：
KAZOR, A
BOYD, IW
机构：
[1] Department of Electronics and Electrical Engineering, University College London, London, WC1E 7JE, Torrington Place
来源：
APPLIED SURFACE SCIENCE | 1992年 / 54卷
关键词：
D O I：
10.1016/0169-4332(92)90087-E
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Future VLSI submicron devices will have gate oxides less than 100 angstrom thick. However, conventional high temperature (850-1000-degrees-C) growth of thin oxides will be impossible since it causes dopant diffusion and wafer warpage. We have used a photo-assisted technique to grow up to 100 angstrom of SiO2 at 550-degrees-C in 240 min. As the conventional growth mechanisms cannot fully explain the growth curves obtained, we suggest a new approach to explain the mechanisms involved in photo-oxidation.
引用
收藏
页码：460 / 464
页数：5
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