TEMPERATURE-DEPENDENCE OF THE CAPACITANCE OF ELECTRIC DOUBLE-LAYER AT THE GALLIUM ELECTRODE

The temperature-dependence of the capacitance of the double layer was investigated at the liquid gallium electrode in ] mol/dm3 HCl and HClO4 solutions. It was found that in the temperature interval investigated (305-333 K) the capacitance increases or slightly changes with temperature at a surface charge q(M) = constant. Starting from the Damaskin-Frumkin model, the capacitance of the dense part of the double layer, C(H), was calculated at different temperatures as a function of q(M). Capacity - charge curves obtained from experimental results and calculated on the basis of the model agree relatively well in the case of HCl solution, while in the case of HClO4 solution this agreement is less satisfactory. This latter finding can be presumably explained in terms of the structure breaking effect of ClO4- ions at the Ga/H2O boundary layer.