EQUAL RATE AND ANISOTROPIC REACTIVE ION ETCHING OF GAAS ALGAAS HETEROSTRUCTURES IN SICL4 PLASMA

被引：0
|
作者：
SALIMIAN, S [1 ]
COOPER, CB [1 ]
机构：
[1] VARIAN ASSOCIATES,RES CTR,PALO ALTO,CA 94303
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C128 / C128
页数：1
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