共 50 条
- [1] DEFECT FORMATION IN INAS1-XSBX SOLID-SOLUTIONS [J]. INORGANIC MATERIALS, 1995, 31 (03) : 283 - 286
- [2] ELECTRO-LIQUID EPITAXY OF INAS1-XSBX SOLID-SOLUTIONS [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (11): : 2233 - 2237
- [6] INTRINSIC CARRIER CONCENTRATION AND EFFECTIVE MASSES IN INAS1-XSBX [J]. INFRARED PHYSICS, 1989, 29 (01): : 35 - 42
- [7] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 315 - 318
- [8] Intensity- and Temperature-Dependent Carrier Recombination in InAs/InAs1-xSbx Type-II Superlattices [J]. PHYSICAL REVIEW APPLIED, 2015, 3 (04):
- [9] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 315 - 318
- [10] INTERBAND MAGNETOOPTICS OF INAS1-XSBX [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (07) : 900 - 906