CHARGE FLUCTUATIONS IN SMALL-CAPACITANCE JUNCTIONS

被引：100

作者：

CLELAND, AN ^{[1
]}

SCHMIDT, JM ^{[1
]}

CLARKE, J ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.64.1565

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The current-voltage characteristics of submicron normal-metal tunnel junctions at millikelvin temperatures are observed to exhibit a sharp Coulomb blockade with high-resistance thin-film leads, but to be heavily smeared for low-resistance leads. As the temperature is lowered, the zero-bias differential resistance tends asymptotically to a limit that is greater for junctions with high-resistance leads. Both observations are explained in terms of a model in which quantum fluctuations in the external circuit enhance the low-temperature tunneling rate. The predictions are in reasonable agreement with the data. © 1990 The American Physical Society.

引用

页码：1565 / 1568

页数：4

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