DEPENDENCE ON DOPING TYPE (P/N) OF THE WATER-VAPOR OXIDATION OF HIGH-GAP ALXGA1-XAS

被引：29

作者：

KISH, FA ^{[1
]}

MARANOWSKI, SA ^{[1
]}

HOFLER, GE ^{[1
]}

HOLONYAK, N ^{[1
]}

CARACCI, SJ ^{[1
]}

DALLESASSE, JM ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation (H2O vapor+N2 carrier gas, 425-525-degrees-C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

引用

页码：3165 / 3167

页数：3

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