CHANNELING ANALYSIS OF DEFECT DISTRIBUTION IN EPITAXIAL SI LAYERS

被引：0
|
作者：
CHANG, JH [1 ]
机构：
[1] UNIV PITTSBURGH,PITTSBURGH,PA 15260
来源：
NUCLEAR INSTRUMENTS & METHODS | 1980年 / 173卷 / 03期
关键词：
D O I：
10.1016/0029-554X(80)90913-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：565 / 570
页数：6
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