INFLUENCE OF ELASTIC COMPRESSION ALONG THE [100] DIRECTION ON THE PARAMETERS OF A TEMPERATURE ELECTRIC INSTABILITY IN MANGANESE-DOPED SILICON

被引:0
|
作者
BAKHADYRKHANOV, MK
TURSUNOV, AA
ASKAROV, SI
ZIKRILLAEV, NF
ABDURAIMOV, A
ILIEV, KM
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:979 / 981
页数:3
相关论文
共 11 条
  • [1] TEMPERATURE-ELECTRIC INSTABILITY IN MANGANESE-DOPED SILICON
    BAKHADYRKHANOV, MK
    KAMILOV, TS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 452 - 452
  • [2] INFLUENCE OF A MAGNETIC-FIELD ON A TEMPERATURE ELECTRIC INSTABILITY IN MANGANESE-DOPED SILICON
    BAKHADYRKHANOV, MK
    ASKAROV, SI
    ZIKRILLAEV, NF
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 268 - 270
  • [3] INFLUENCE OF RESIDUAL CONDUCTIVITY ON PHOTOSENSITIVITY OF MANGANESE-DOPED SILICON
    BAKHADYRKHANOV, MK
    NIGMANKHODZHAEV, SS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 706 - 706
  • [4] INFLUENCE OF A UNIAXIAL COMPRESSION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF MANGANESE-DOPED SILICON
    BAKHADYRKHANOV, MK
    ABDURAIMOV, A
    ILIEV, KM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 1034 - 1035
  • [5] NATURE OF ELECTRIC SIGNALS UNDER ELASTIC COMPRESSION OF DOPED SILICON BY SHOCK-WAVES
    MINEEV, VN
    TYUNYAEV, YN
    IVANOV, AG
    [J]. FIZIKA TVERDOGO TELA, 1974, 16 (06): : 1606 - 1610
  • [6] The influence of diffusion temperature on the structural, optical and magnetic properties of manganese-doped zinc oxysulfide thin films
    Polat, I.
    Aksu, S.
    Altunbas, M.
    Yilmaz, S.
    Bacaksiz, E.
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2011, 184 (10) : 2683 - 2689
  • [7] On the Change in the Form and Parameters of Silicon Compression Curves under Temperature and Electric Current Impacts
    A. R. Velikhanov
    [J]. Crystallography Reports, 2019, 64 : 1134 - 1137
  • [8] On the Change in the Form and Parameters of Silicon Compression Curves under Temperature and Electric Current Impacts
    Velikhanov, A. R.
    [J]. CRYSTALLOGRAPHY REPORTS, 2019, 64 (07) : 1134 - 1137
  • [9] Influence of deposition parameters and temperature on stress and strain of in situ doped PECVD silicon carbide
    Pham, HTM
    de Boer, CR
    Pakula, L
    Sarro, PM
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 759 - 762
  • [10] Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide
    Pham, Hoa T. M.
    De Boer, Charles R.
    Pakula, Lukasz
    Sarro, Pasqualina M.
    [J]. Materials Science Forum, 2002, 389-393 (01) : 759 - 762