Charge capture in AlGaAs/GaAs heterostructures with disordered antidot lattice

被引：0
|
作者：
Basmaji, P
Gusev, GM
Lubyshev, DI
Silva, MDA
Rossi, JC
Nastaushev, YV
Baklanov, MR
机构：
[1] LAB CHAMPS MAGNET INTENSES,CNRS,F-38042 GRENOBLE,FRANCE
[2] UNIV FED SAO CARLOS,SAO CARLOS,BRAZIL
[3] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK,RUSSIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期
基金：
巴西圣保罗研究基金会;
关键词：
heterostructures;
D O I：
10.1016/0921-5107(95)01351-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed hot electron trapping by DY centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
引用
收藏
页码：322 / 324
页数：3
相关论文
共 50 条
  • [1] Charge capture in AlGaAs/GaAs heterostructures with disordered antidot lattice
    Basmaji, P., 1600, Elsevier Science S.A., Lausanne, Switzerland (B35): : 1 - 3
  • [2] MAGNETOTRANSPORT THROUGH AN ANTIDOT LATTICE IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
    ENSSLIN, K
    PETROFF, PM
    PHYSICAL REVIEW B, 1990, 41 (17): : 12307 - 12310
  • [3] Random laser in totally disordered 2D GaAs/AlGaAs heterostructures
    Monmayrant, A.
    Gauthier-Lafaye, O.
    Campos, J.
    Bonnefont, S.
    Bahkta, K.
    Vanneste, C.
    Bachelard, N.
    Sebbah, P.
    Lozes-Dupuy, F.
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [4] MAGNETOTRANSPORT THROUGH DISORDERED AND ANISOTROPIC ANTIDOT LATTICES IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
    TSUKAGOSHI, K
    WAKAYAMA, S
    OTO, K
    TAKAOKA, S
    MURASE, K
    GAMO, K
    PHYSICAL REVIEW B, 1995, 52 (11): : 8344 - 8347
  • [5] Reduction of charge noise in shallow GaAs/AlGaAs heterostructures with insulated gates
    Liang, S.
    Nakamura, J.
    Gardner, G. C.
    Manfra, M. J.
    APPLIED PHYSICS LETTERS, 2020, 117 (13)
  • [6] Oscillatory Rate of Excess Carrier Capture into Quantum Wells of the AlGaAs/GaAs Heterostructures
    N. G. Yaremenko
    V. A. Strakhov
    M. V. Karachevtseva
    Journal of Communications Technology and Electronics, 2018, 63 : 1230 - 1234
  • [7] Oscillatory Rate of Excess Carrier Capture into Quantum Wells of the AlGaAs/GaAs Heterostructures
    Yaremenko, N. G.
    Strakhov, V. A.
    Karachevtseva, M. V.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2018, 63 (10) : 1230 - 1234
  • [8] An experimental study of AlGaAs/GaAs heterostructures using an advanced transient charge processor
    Gmucová, K
    Csabay, O
    Thurzo, I
    Harmatha, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (03): : 1105 - 1113
  • [9] DYNAMICS OF WAVEPACKETS IN GAAS/ALGAAS HETEROSTRUCTURES
    LEO, K
    FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32, 1992, 32 : 97 - 112
  • [10] PRESSURE EFFECTS IN GAAS/ALGAAS HETEROSTRUCTURES
    KO, DYK
    INKSON, JC
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3515 - 3518
12345