DETERMINING THE THICKNESS OF VERY THIN-FILMS OF TIW

被引:5
|
作者
TOMPKINS, HG
机构
[1] Semiconductor Analytical Laboratory, Advanced Technology Center, Motorola, Inc., Mesa, Arizona
关键词
D O I
10.1002/sia.740180205
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work we show how to use ellipsometry to measure the thickness of TiW when the film thickness is less-than-or-equal-to 250 angstrom. Because the stoichiometry and microstructure of TiW depends strongly on the deposition parameters, the optical constants of TiW deposited in two different systems will not in general be the same. Accordingly, the optical constants of the film material are often not known. We show that the method is robust if a reasonable approximation to the optical constants is available, and we show how to obtain such an approximation. Auger electron spectroscopy is used to substantiate the conclusions.
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页码:93 / 97
页数:5
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