ANISOTROPIC MAGNETORESISTIVE SENSORS AND MAGNETOMETERS APPLYING ALTERNATING BIAS MAGNETIC-FIELD

被引：0
|
作者：
ZOU, FW [1 ]
HE, ZY [1 ]
JIA, KC [1 ]
机构：
[1] ACAD SINICA,INST PHYS,STATE KEY LAB MAGNETISM,BEIJING 100080,PEOPLES R CHINA
来源：
CHINESE PHYSICS LETTERS | 1993年 / 10卷 / 10期
关键词：
D O I：
10.1088/0256-307X/10/10/002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thin permalloy film with uniaxial anisotropy have been prepared by ion-beam sputtering method. Magnetic field sensors of this type film are composed of four magnetoresistors in Wheastone bridge connection. One may obtain sensitivity more than 10 mV/Oe with 10(-5) Oe resolution by suitable design of sensors parameters. A model based on single domains structure and resistance anisotropy effect explains the behavior of the sensors and a method has been developed to reduce the influence of offset voltage and hysteresis to minimum.
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页码：581 / 584
页数：4
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