BORON NEUTRALIZATION AND HYDROGEN DIFFUSION IN SILICON SUBJECTED TO LOW-ENERGY HYDROGEN IMPLANTATION

被引：43
|
作者：
ZUNDEL, T [1 ]
MESLI, A [1 ]
MULLER, JC [1 ]
SIFFERT, P [1 ]
机构：
[1] CTR RECH NUCL,CNRS,UA 292,PHYS & APPLICAT SEMICOND LAB,F-67037 STRASBOURG,FRANCE
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期
关键词：
D O I：
10.1007/BF00617761
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：31 / 40
页数：10
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