ANALYSIS OF THERMIONIC EMISSION CURRENT OVER THE ALXGA1-XAS BARRIER IN A GAAS/ALXGA1-XAS/GAAS (X-GREATER-THAN-0.45) STRUCTURE

被引：10
|
作者：
ZOHTA, Y [1 ]
机构：
[1] TOSHIBA CORP,TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期
关键词：
D O I：
10.1143/JJAP.27.L906
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L906 / L908
页数：3
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