APPLYING DEEP ULTRAVIOLET LITHOGRAPHY

This paper discusses the application of a deep wafer stepper and associated photoresist systems to advanced semiconductor processing. It is shown that, even with the limited number of photoresists available, deep UV lithography is a viable candidate for advanced processes requiring half micron and smaller features. First, the performance of the exposure tool is discussed; lens performance data including image field curvature, and distortion is shown. Next, results obtained using two different approaches for photoresist processing are discussed. Single layer wet developed photoresist processing is shown to be useable in those cases where topography is not severe. Surface imaging photoresist approaches using the DESIRE(R) process are shown to be applicable in cases where topography is an issue or broader process latitude is required.