CONDUCTANCE OF SILICON GRAIN-BOUNDARIES IN AS-GROWN AND ANNEALED BICRYSTALS

被引：19
|
作者：
POULLAIN, G
MERCEY, B
NOUET, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期
关键词：
D O I：
10.1063/1.338088
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1547 / 1552
页数：6
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