HIGH-GAIN N-P-N AND P-N-P INGAAS/INALAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH INAS CAP LAYERS BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

PENG, CK

WON, T

CHEN, J

LITTON, C

MORKOC, H

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] USAF,AVIONICS LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2445 / 2446

页数：2

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