ANDERSON LOCALIZATION AND UNIVERSAL CONDUCTANCE FLUCTUATIONS WITH SPIN-ORBIT INTERACTIONS IN DELTA-DOPED GAAS FILMS AND WIRES

被引：2
|
作者：
TANIGUCHI, H
TAKAHARA, J
TAKAGAKI, Y
GAMO, K
NAMBA, S
TAKAOKA, S
MURASE, K
机构：
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,FAC SCI,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期
关键词：
WEAK LOCALIZATION; PHASE BREAKING SCATTERING; ANTILOCALIZATION; SPIN-ORBIT SCATTERING; QUANTUM WIRE; UNIVERSAL CONDUCTANCE FLUCTUATIONS;
D O I：
10.1143/JJAP.30.2808
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Weak localization and universal conductance fluctuations in Si-doped GaAs films and wires are investigated. A positive magnetoresistance due to antilocalization is observed in films of high carrier density. It disappears when the substrate is irradiated by an Ar ion beam. The spin-orbit scattering time tau(so) is strongly dependent on the carrier density n(s). The ratio of the elastic scattering time tau(0) to tau(so) has a power-law dependence of (tau(0)/tau(so)) is-proportional-to n(s)-2.9. The amplitude of the conductance fluctuations are discussed in terms of the phase breaking time deduced ffom the weak localization.
引用
收藏
页码：2808 / 2814
页数：7
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