FEMTOSECOND LASER EXCITATION OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2

被引：218

作者：

BECKER, MF ^{[1
]}

BUCKMAN, AB ^{[1
]}

WALSER, RM ^{[1
]}

LEPINE, T ^{[1
]}

GEORGES, P ^{[1
]}

BRUN, A ^{[1
]}

机构：

[1] UNIV PARIS 11,OPT THEOR & APPL LAB,CNRS,URA 14,F-91403 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.112974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VO2 thin films by making pump-probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high-temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index enables ultrafast optical switching devices in VO2.

引用

页码：1507 / 1509

页数：3

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