ELECTROLUMINESCENCE - A STUDY OF NON-GEMINATE RADIATIVE AND NONRADIATIVE BULK RECOMBINATION IN A-SI-H

Under forward bias p-i-n a-Si:H devices inject both holes and electrons resulting in electroluminescence. We have measured under constant voltage the forward bias current and the electroluminescence as a function of voltage, temperature and photodegradation. Measurements were made in the temperature range of 80-degrees < T < 320-degrees-K. We found that while the non-radiative lifetime tau was a function of T and photodegradation, the radiative lifetime tau-L did not vary with any of these parameters. A simple model is proposed to explain the experimental data.