FABRICATION OF ULTRATHIN INSULATOR FILMS ON N-SI SUBSTRATE FOR ELECTRON-TUNNELING EMITTER ARRAYS

被引：0

作者：

YOKOO, K ^{[1
]}

UCHIMI, A ^{[1
]}

OGISHI, T ^{[1
]}

NAKAMURA, R ^{[1
]}

ONO, S ^{[1
]}

USAMI, K ^{[1
]}

机构：

[1] UNIV ELECTROCOMMUN, CHOFU, TOKYO 182, JAPAN

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 99期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrathin silicon dioxide layers on silicon were formed by chemical oxidation of silicon as an insulator in MIS tunnelling emitter. The honeycomb structure of MIS diodes proved that the dominant charge transport through the insulator layer is tunnelling and good quality ultrathin oxide layer can be formed on silicon by the chemical oxidation.

引用

页码：21 / 24

页数：4

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