MAGNETORESISTANCE OF N-TYPE GE ON TRANSITION FROM IMPURITY TO BAND CONDUCTION

被引:0
|
作者
MATVEEV, GA [1 ]
SOKOLOV, VI [1 ]
TSIDILKOVSKII, IM [1 ]
机构
[1] ACAD SCI USSR,URAL SCI CTR,PHYS MET INST,SVERDLOVSK,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期
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D O I
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:727 / 728
页数:2
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