MICRODOSIMETRIC APPROACH TO ANALYSIS OF FAILURES IN SYSTEMS OF SEMICONDUCTOR-DEVICES OF A SINGLE TYPE UNDER NEUTRON-IRRADIATION

被引：0
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作者：
GOLEMINOV, NG
IVANOV, VI
KRAMERAGEEV, EA
机构：
来源：
SOVIET ATOMIC ENERGY | 1980年 / 49卷 / 06期
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D O I：
10.1007/BF01128058
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：833 / 835
页数：3
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