HIGH-GAIN OPTICAL-DETECTION WITH GAAS FIELD-EFFECT TRANSISTORS

被引：25
|
作者：
MACDONALD, RI
机构：
来源：
APPLIED OPTICS | 1981年 / 20卷 / 04期
关键词：
D O I：
10.1364/AO.20.000591
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：591 / 594
页数：4
相关论文
共 50 条
  • [1] HIGH-GAIN FREQUENCY-CONVERTER USING FIELD-EFFECT TRANSISTORS
    YOUSUF, S
    AMMAR, A
    PATEL, K
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (06) : 706 - 709
  • [2] Circuitry design feature of stages with high-gain coefficient on field-effect transistors
    Krutchinsky, Sergey
    Bespyatov, Vasiliy
    Korolev, Alexander
    Zhebrun, Eugeniy
    Zolotarev, Anton
    [J]. KEY ENGINEERING MATERIALS AND COMPUTER SCIENCE, 2011, 320 : 589 - 596
  • [3] High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
    Tosun, Mahmut
    Chuang, Steven
    Fang, Hui
    Sachid, Angada B.
    Hettick, Mark
    Lin, Yongjing
    Zeng, Yuping
    Javey, Ali
    [J]. ACS NANO, 2014, 8 (05) : 4948 - 4953
  • [4] GAAS FIELD-EFFECT TRANSISTORS
    STERZER, F
    [J]. MICROWAVE JOURNAL, 1978, 21 (11) : 73 - 77
  • [5] OPTICAL-DETECTION OF HIGH-FIELD DOMAINS IN GAAS ALAS SUPERLATTICES
    GRAHN, HT
    SCHNEIDER, H
    VONKLITZING, K
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1757 - 1759
  • [6] A Novel High-Gain Amplifier Circuit Using Super-Steep-Subthreshold-Slope Field-Effect Transistors
    Couriol, Matthieu
    Cadareanu, Patsy
    Giacomin, Edouard
    Gaillardon, Pierre-Emmanuel
    [J]. PROCEEDINGS OF THE 2021 IFIP/IEEE INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC), 2021, : 54 - 59
  • [7] Terahertz imaging with GaAs field-effect transistors
    Lisauskas, A.
    von Spiegel, W.
    Boubanga-Tombet, S.
    El Fatimy, A.
    Coquillat, D.
    Teppe, F.
    Dyakonova, N.
    Knap, W.
    Roskos, H. G.
    [J]. ELECTRONICS LETTERS, 2008, 44 (06) : 408 - 409
  • [8] NOVEL MICROWAVE GAAS FIELD-EFFECT TRANSISTORS
    VOKES, JC
    HUGHES, BT
    WIGHT, DR
    DAWSEY, JR
    SHRUBB, SJW
    [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 627 - 629
  • [9] BREAKDOWN MECHANISM IN GAAS FIELD-EFFECT TRANSISTORS
    KERNER, BS
    KOZLOV, NA
    NECHAEV, AM
    SINKEVICH, VF
    [J]. SOVIET MICROELECTRONICS, 1983, 12 (03): : 122 - 128
  • [10] RELIABILITY OF POWER GAAS FIELD-EFFECT TRANSISTORS
    FUKUI, H
    WEMPLE, SH
    IRVIN, JC
    NIEHAUS, WC
    HWANG, JCM
    COX, HM
    SCHLOSSER, WO
    DILORENZO, JV
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) : 395 - 401
12345