HIGH-RESOLUTION X-RAY-DIFFRACTION OF INALAS/INP SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：16

作者：

CHANG, JCP

CHIN, TP

KAVANAGH, KL

TU, CW

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural properties of InAlAs/InP superlattices grown by gas source molecular beam epitaxy on (001) InP were investigated extensively with high-resolution x-ray diffraction. Very high quality material was obtained as indicated by narrow peak widths, numerous satellite peaks, and distinct Pendellosung fringes. Intermixing of group-V elements at each interface was quantified by dynamical simulations of (004), (002), and (115) reflections. The accuracy of the fits to both peak positions and peak intensities for all three reflections provides strong evidence for the proposed four-layer periodic structure.

引用

页码：1530 / 1532

页数：3