THE INFLUENCE OF STRAIN-ENERGY ON ABNORMAL GRAIN-GROWTH IN COPPER THIN-FILMS

被引：60
|
作者：
ZIELINSKI, EM
VINCI, RP
BRAVMAN, JC
机构：
[1] Department of Materials Science, Stanford University, Stanford
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 08期
关键词：
D O I：
10.1063/1.114455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Biaxial stress and strain in (100) and (ill) oriented grains have been measured as a function of annealing temperature for a Cu him on an oxidized Si substrate which exhibits abnormal (100) grain growth The observed behavior indicates isostrain averaging, which is consistent with grain growth that is controlled by strain energy density minimization. In contrast, two films which do not exhibit (100) abnormal grain growth appear to follow isostress averaging. Strain energy density minimization in this situation favors (111) grain growth. (C) 1995 American Institute of Physics.
引用
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页码：1078 / 1080
页数：3
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