SURFACE OXIDATION OF HIGH-SURFACE-AREA SILICON-CARBIDE - FT-IR STUDIES

被引：0
|
作者：
QUINTARD, P
RAMIS, G
CAUCHETIER, M
BUSCA, G
LORENZELLI, V
机构：
[1] FAC INGN GENOVA,IST CHIM,I-16129 GENOVA,ITALY
[2] CENS,DEPT PHYSICOCHIM,IRDI,F-91191 GIF SUR YVETTE,FRANCE
来源：
MIKROCHIMICA ACTA | 1988年 / 2卷 / 1-6期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：75 / 77
页数：3
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