BEHAVIOR OF LARGE-SCALE SURFACE PERTURBATIONS DURING SILICON EPITAXIAL GROWTH

被引：13
|
作者：
RUNYAN, WR
ALEXANDER, EG
CRAIG, SE
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 11期
关键词：
D O I：
10.1149/1.2426436
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1154 / +
页数：1
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