ELECTRON-BEAM MODULATION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4
|
作者：
WIEDER, HH
DAVIS, NM
FLESNER, LD
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期
关键词：
D O I：
10.1063/1.91769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：943 / 945
页数：3
相关论文
共 50 条
  • [1] OPTIMIZATION OF THE PROXIMITY PARAMETERS FOR THE ELECTRON-BEAM EXPOSURE OF NANOMETER GATE-LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    PATRICK, W
    VETTIGER, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2037 - 2041
  • [2] SUB-100-NM GATE LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND MODULATION-DOPED FIELD-EFFECT TRANSISTORS FABRICATED BY A COMBINATION OF MOLECULAR-BEAM EPITAXY AND ELECTRON-BEAM LITHOGRAPHY
    ALLEE, DR
    DELAHOUSSAYE, PR
    SCHLOM, DG
    HARRIS, JS
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 328 - 332
  • [3] HIGH-SPEED RESPONSE OF A GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO ELECTRON-BEAM EXCITATION
    FLESNER, LD
    DAVIS, NM
    WIEDER, HH
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3873 - 3877
  • [4] WSIX REFRACTORY METALLIZATION FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    LAHAV, AG
    WU, CS
    BAIOCCHI, FA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1785 - 1795
  • [5] BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    LI, RG
    WANG, ZG
    LIANG, JB
    REN, GB
    FAN, TW
    LIN, LY
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1270 - 1274
  • [6] ELECTRON-BEAM INDUCED CURRENT IN GAAS FIELD-EFFECT TRANSISTORS
    NEWMAN, DS
    FERRY, DK
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 169 - 171
  • [7] A NEW INTERPRETATION OF THE ORIENTATION EFFECT IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUANG, QA
    LU, SJ
    TONG, QY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1A): : L11 - L14
  • [8] POLYACETYLENE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CHEN, YC
    CHENG, CC
    CHEN, MH
    HUANG, KC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A): : 2101 - 2106
  • [9] CDTE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    DREIFUS, DL
    KOLBAS, RM
    HARRIS, KA
    BICKNELL, RN
    HARPER, RL
    SCHETZINA, JF
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 931 - 933
  • [10] Polyacetylene metal-semiconductor field-effect transistors
    Chen, Ying-Chung
    Cheng, Chien-Chuan
    Chen, Mao-Hsiung
    Huang, Kuang-Chin
    [J]. 1600, (30):
12345