PHOTOEMISSION-STUDY OF NEAR-SURFACE BAND-GAP STATES IN A-SI-H

被引：2
|
作者：
WINER, K [1 ]
LEY, L [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1165 / 1169
页数：5
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