MAGNETIC PROPERTIES OF Mn-DOPED InSe

The static magnetic susceptibility (MS) and the electron paramagnetic resonance (EPR) spectra of a layered semiconductor InSe doped with manganese (about 5 at.%) have been studied in the temperature range 4.2-300 K, as well as the crystal structure of this compound (at T = 300 K). The formation of a solid solution In1-xMnxSe (about 90 vol.%), ferromagnetic clusters with the Curie temperatures higher than 350 K, and inclusions of the antiferromagnetic phase MnSe (about 10 vol.%) has been established. The positive background MS practically does not depend on the temperature and partially originates from those ferromagnetic states and atypical Van-Vleck ions Mn3+(d(4)) and Mn+ (d(6)). The maxima of the MS at about 160 and 270 K are associated with antiferromagnetic transitions in the MnSe inclusions. A wide EPR line is caused by weakly interacting Mn2+ ions which are not included into ferromagnetic and antiferromagnetic clusters.