TRAVELING-WAVE AMPLIFICATION IN GAAS IMAGE WAVE-GUIDE AT V-BAND

被引：6
|
作者：
LYUBCHENKO, VE
MARTYAKHIN, VA
机构：
[1] Solid-State Microwave Laboratory, Institute of Radio Engineering & Electronics (JREE), Russian Academy of Sciences, 141120, Moscow, 1 Vvedenskii sq., Fryazino
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 11期
关键词：
TRAVELING-WAVE SEMICONDUCTOR AMPLIFIERS; SOLID-STATE MICROWAVE DEVICES; MICROWAVE AMPLIFIERS;
D O I：
10.1049/el:19940601
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The amplification of slow electromagnetic waves by drifting electron flow and electron drag effect voltage were observed experimentally in GaAs waveguide structures at frequencies of 55-78GHz.
引用
收藏
页码：869 / 870
页数：2
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